EPH - International Journal of Applied Science (ISSN: 2208-2182) https://ephjournal.com/index.php/as <p><strong><span id="cell-2-name" class="gridCellContainer"><span class="label">EPH - International Journal of Applied Science (ISSN: 2208-2182)&nbsp;</span></span></strong> publishes a wide range of high quality research articles in the field (but not limited to) given below: Biology, Physics, Chemistry, Pharmacy, Zoology, Health sciences, Agriculture and Forestry, Environmental sciences, Mathematics, Statistics, Animal Science, Bio Technology, Medical Sciences, Geology, Social Sciences, Natural sciences, Political Science, Urban Development etc.<br><span style="font-size: 1.5em;"><strong> <span style="text-shadow: #ff6600 0px 0px 3px;">Current Impact Factor: 2.496</span></strong></span></p> Engineer's Publication House en-US EPH - International Journal of Applied Science (ISSN: 2208-2182) 2208-2182 <ul> <li>All contributor(s) agree to transfer the copyright of this article to <strong>EPH Journal.</strong></li> <li><strong>EPH Journal</strong> will have all the rights to distribute, share, sell, modify this research article with proper reference of the contributors.&nbsp;</li> <li><strong>EPH Journal</strong> will have the right to edit or completely remove the published article on any misconduct happening.</li> </ul> Porous Silicon Fabrication Process for Optical Reflectors https://ephjournal.com/index.php/as/article/view/754 <p>We describe the use of porous silicon fabrication technique for fabricating non-manhattan structures in silicon using wet etching. The fabrication method is simple to set up, economical and produces smooth etched surface. A solid source diffusion of N++ in a P type wafer with low stress thermally grown silicon nitride is used as a masking layer. Comparison of porous silicon etches with wafers solid source diffusion and implanted diffusion is presented. The result show that areas where a solid source diffusion is used form an etch angle of 70-80°, however using an implanted diffusion the etch angle is closer to 90°. The selectivity of the etch during porous silicon fabrication using any of the above two as masking layer results in fabrication of high aspect ratio non-manhattan structures. These structures since are wet etched do not have surface roughness and can be used for optical applications.</p> Ying Yue Nian Zhen ##submission.copyrightStatement## http://creativecommons.org/licenses/by-nc-nd/4.0 2018-05-30 2018-05-30 4 5 01 07